Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
| Autor: | Stefan De Gendt, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Giovanni V. Resta, Yashwanth Balaji, Alessandra Leonhardt |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
2-d materials
metal Computer science growth fets integration 02 engineering and technology black phosphorus Field (computer science) law.invention polarity control Atomic layer deposition Beyond CMOS mos2 transistors law transition metal dichalcogenides (tmdcs) 0202 electrical engineering electronic engineering information engineering Electronic engineering doping-free Electronics Electrical and Electronic Engineering Electronic circuit Very-large-scale integration low power Graphene scaling field-effect transistors negative-capacitance graphene Doping Emphasis (telecommunications) beyond cmos 020202 computer hardware & architecture ab-initio simulation heterostructures CMOS Hardware and Architecture transport State (computer science) transfer Software |
| Zdroj: | IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1486-1503 |
| ISSN: | 1557-9999 1063-8210 |
| DOI: | 10.1109/tvlsi.2019.2914609 |
| Popis: | Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we describe a possible roadmap to enable CMOS compatible integration of 2-D materials. We then shift our attention to 2-D devices and circuits and review the state of the art. Among the plethora of device concepts, we look closely at 2-D tunnel FETs (TFETs) and negative-capacitance FETs (NC-FETs) for low-power applications. We also put a particular emphasis on doping-free polarity-controllable systems that use electrostatic doping to eliminate the need for physical or chemical doping. We conclude with an analysis of simulations of scaled devices and discuss the possibilities enabled at circuit level by 2-D electronics. |
| Databáze: | OpenAIRE |
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