Self-Assembly Growth of In-Rich InGaAs Core–Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity
Autor: | Pingping Chen, Chen Zhou, Kun Zheng, Xutao Zhang, Jin Zou, Wei Lu |
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Rok vydání: | 2017 |
Předmět: |
Materials science
business.industry Mechanical Engineering Relaxation (NMR) Nanowire Bioengineering Nanotechnology 02 engineering and technology General Chemistry Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences 0104 chemical sciences Planar Optoelectronics General Materials Science Self-assembly 0210 nano-technology business Ternary operation Layer (electronics) |
Zdroj: | Nano Letters. 17:7824-7830 |
ISSN: | 1530-6992 1530-6984 |
Popis: | Understanding the compositional distribution of ternary nanowires is essential to build the connection between nanowire structures and their potential applications. In this study, we grew epitaxial ternary InGaAs nanowires with high In concentration on GaAs {111}B substrates. Our detailed electron microscopy characterizations suggest that the grown ternary InGaAs nanowires have an extraordinary core–shell structure with In-rich cores and Ga-enriched shells, in which both nanowire cores and shells showed compositional gradient. It was found that In-rich nanowire cores are formed due to the Ga-limited growth environment, caused by the competition with the spontaneous InGaAs planar layer growth on the substrate that consumes more Ga than the nominal Ga concentration during the growth. Moreover, the composition gradient in the nanowires cores and shells is a result of strain relaxation between them. Our optoelectronic property measurements from prototype nanowire devices show a remarkable photoresponsivity un... |
Databáze: | OpenAIRE |
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