High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
Autor: | Daniil I. Nikitichev, Michel Calligaro, Igor Krestnikov, Nicolas Michel, M. Ruiz, Daniil A. Livshits, Edik U. Rafailov, Michel Krakowski, Maria Ana Cataluna, Ying Ding |
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Rok vydání: | 2010 |
Předmět: |
Quantum optics
Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy 02 engineering and technology Laser 01 natural sciences law.invention Semiconductor laser theory 010309 optics 020210 optoelectronics & photonics Optics Quantum dot laser Quantum dot law Picosecond 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Laser beam quality business Diode |
Zdroj: | Applied Physics B |
ISSN: | 1432-0649 0946-2171 |
Popis: | We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. |
Databáze: | OpenAIRE |
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