Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation
| Autor: | Gertjan Koster, Muhammad Boota, Matthijn Dekkers, Guus Rijnders, Minh D. Nguyen, Kurt Vergeer, Evert Pieter Houwman, Giulia Lanzara |
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| Přispěvatelé: | Inorganic Materials Science, Faculty of Science and Technology, Boota, Muhammad, Houwman, Evert P., Dekkers, Matthijn, Nguyen, Minh D., Vergeer, Kurt H., Lanzara, Giulia, Koster, Gertjan, Rijnders, Guus |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Ferroelectricity Silicon thin film Piezoelectricity Pulsed laser deposition chemistry.chemical_element 02 engineering and technology Dielectric METIS-316172 Epitaxy 01 natural sciences Article PMN-PT 0103 physical sciences General Materials Science Thin film Polarization (electrochemistry) Materials of engineering and construction. Mechanics of materials pulsed laser deposition 010302 applied physics orientation control piezoelectricity business.industry epitaxy Optical Magnetic and Electronic Device Materials 021001 nanoscience & nanotechnology ferroelectricity chemistry IR-100123 TA401-492 Optoelectronics Materials Science (all) Orientation control 0210 nano-technology business TP248.13-248.65 Biotechnology |
| Zdroj: | Science and Technology of Advanced Materials Science and technology of advanced materials, 17(1), 45-57. Taylor & Francis Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 45-57 (2016) |
| ISSN: | 1878-5514 1468-6996 |
| Popis: | Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The orientation of the SrRuO3 bottom electrode, either (110) or (001), was controlled by the deposition conditions and the subsequent PMN-PT layer followed the orientation of the bottom electrode. The ferroelectric, dielectric and piezoelectric properties of the (SrRuO3/PMN-PT/SrRuO3) ferroelectric capacitors exhibit orientation dependence. The properties of the films are explained in terms of a model based on polarization rotation. At low applied fields domain switching dominates the polarization change. The model indicates that polarization rotation is easier in the (110) film, which is ascribed to a smaller effect of the clamping on the shearing of the pseudo-cubic unit cell compared to the (001) case. |
| Databáze: | OpenAIRE |
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