Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Autor: | Igor Stolichnov, G. V. Luong, Qing-Tai Zhao, Ali Saeidi, Adrian M. Ionescu, Farzan Jazaeri, Siegfried Mantl |
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Rok vydání: | 2018 |
Předmět: |
Materials science
Transconductance Bioengineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention law tunnel FET 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Figure of merit General Materials Science Electrical and Electronic Engineering Homojunction 010302 applied physics business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Tunnel field-effect transistor Ferroelectricity Capacitor Mechanics of Materials Booster (electric power) ferroelectric Optoelectronics 0210 nano-technology business NC-TFET negative capacitance Hardware_LOGICDESIGN Negative impedance converter |
Zdroj: | Nanotechnology |
ISSN: | 1361-6528 2043-6262 0953-8984 0957-4484 |
Popis: | This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a trained-polycrystalline PZT capacitor and the tunnel FET (TFET) gate capacitance fabricated on a strained silicon-nanowire technology. We report a non-hysteretic switch configuration by combining a homojunction TFET and a negative capacitance effect booster, suitable for logic applications, for which the on-current is increased by a factor of 100, the transconductance by 2 orders of magnitude, and the low swing region is extended. The operation of a hysteretic negative capacitance TFET, when the matching condition for the negative capacitance is fulfilled only in a limited region of operation, is also reported and discussed. In this late case, a limited improvement in the device performance is observed. Overall, the paper demonstrates the main beneficial effects of negative capacitance on TFETs are the overdrive and transconductance amplification, which exactly address the most limiting performances of current TFETs. |
Databáze: | OpenAIRE |
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