Defect profiling in FEFET Si:HfO2 layers
| Autor: | Laurent Breuil, Yusuke Higashi, Ben Kaczer, Valery V. Afanas'ev, K. Banerjee, Taehwan Jung, G. Van den bosch, Barry O'Sullivan, Brecht Truijen, Sergiu Clima, R.A. Izmailov, S. R. C. McMitchell, J. Van Houdt, Dimitri Linten, V. Putcha, Nicolo Ronchi, Eddy Simoen, Robin Degraeve |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Kinetics Oxide chemistry.chemical_element 02 engineering and technology Trapping Electron 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Threshold voltage chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Polarization (electrochemistry) |
| Zdroj: | Applied Physics Letters. 117:203504 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0029072 |
| Popis: | Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with a strong temperature dependence of the electron emission kinetics in ferroelectric layers, which results from the onset of polarization of the ferroelectric layer. This can lead to an apparent difference in the defect characteristics in ferroelectric-HfO2 compared to the paraelectric-HfO2 structures they are shown to closely resemble when this contribution is decoupled. The results demonstrate the presence of a defect band closely aligned to the silicon conduction band, which can easily be accessed during device operation. ispartof: Applied Physics Letters vol:117 issue:20 pages:203504-1-203504-5 status: published |
| Databáze: | OpenAIRE |
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