Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors
| Autor: | N. I. Craciun, Paul W. M. Blom, Jurjen Wildeman |
|---|---|
| Přispěvatelé: | Zernike Institute for Advanced Materials, Polymer Chemistry and Bioengineering |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Arrhenius equation
Physics Electron mobility Field (physics) Condensed matter physics LIGHT-EMITTING-DIODES SOLIDS General Physics and Astronomy Charge (physics) Electron POLY(P-PHENYLENE VINYLENE) Orders of magnitude (numbers) Organic semiconductor symbols.namesake MOBILITY DEPENDENCE TRANSISTORS symbols ELECTRON FIELD POLYMERS Ohmic contact HOLE TRANSPORT |
| Zdroj: | Physical Review Letters, 100(5):056601. AMER PHYSICAL SOC |
| ISSN: | 0031-9007 |
| DOI: | 10.1103/physrevlett.100.056601 |
| Popis: | Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence $\mathrm{ln} (\ensuremath{\mu})\ensuremath{\propto}1/{T}^{2}$ for the mobility $\ensuremath{\mu}$. We demonstrate that in space-charge limited diodes the hole mobility (${\ensuremath{\mu}}_{h}$) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence ${\ensuremath{\mu}}_{h}(T)={\ensuremath{\mu}}_{0}\mathrm{exp} (\ensuremath{-}\ensuremath{\Delta}/kT)$ at low fields, due to the presence of extrinsic carriers from the Ohmic contact. The transport in a range of organic semiconductors, with a variation in room temperature mobility of more than 6 orders of magnitude, is characterized by a universal mobility ${\ensuremath{\mu}}_{0}$ of $30--40\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$. As a result, we can predict the full temperature dependence of their charge transport properties with only the mobility at one temperature known. |
| Databáze: | OpenAIRE |
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