Mechanistic investigation of the growth of Fe1-xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1-yGey)3 (0 ≤ y ≤ 0.33) ternary alloy nanowires
| Autor: | Song Jin, Stephen R. Lee, John P. DeGrave, Penelope Carmichael, Jeremy M. Higgins, Andrew L. Schmitt |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Doping Alloy General Engineering Nanowire Nucleation General Physics and Astronomy Nanotechnology Chemical vapor deposition Substrate (electronics) engineering.material Germanide chemistry.chemical_compound chemistry Chemical engineering Silicide engineering General Materials Science |
| Zdroj: | ACS nano. 5(4) |
| ISSN: | 1936-086X |
| Popis: | We present the chemical vapor deposition (CVD) reactions of the single source precursor Fe(SiCl(3))(2)(CO)(4) over Si, Ge, CoSi(2)/Si, and CoSi/Si substrates to explore the growth and doping processes of silicide nanowires (NWs). Careful investigation of the composition and morphology of the NW products and the intruded silicide films from which they nucleate revealed that the group IV elements (Si, Ge) in the NW products originate from both the precursor and the substrate, while the metal elements incorporated into the NWs (Fe, Co) originate from vapor phase precursor delivery. The use of a Ge growth substrate enabled the successful synthesis of Fe(5)Si(2)Ge NWs, the first report of a metal silicide-germanide alloy NW. Further, investigation of the pyrolysis of the CoSiCl(3)(CO)(4) precursor revealed independent delivery of Co and Si species during CVD reactions. This understanding enabled a new, more robust two-precursor synthetic route to Fe(1-x)Co(x)Si alloy NWs using Fe(SiCl(3))(2)(CO)(4) and CoCl(2). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|