Spectral analysis of InGaAs/GaAs quantum-dot lasers
Autor: | Amalia Patanè, Peter Michael Smowton, Huw D. Summers, Mohamed Henini, E. J. Johnston, S. V. Dewar, Paul J. Hulyer, Antonio Polimeni |
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Jazyk: | angličtina |
Rok vydání: | 1999 |
Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Spectral line Semiconductor laser theory law.invention Modulation law Quantum dot laser Optoelectronics business Quantum well Optical path length QC |
Zdroj: | Scopus-Elsevier |
ISSN: | 0003-6951 |
Popis: | The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. |
Databáze: | OpenAIRE |
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