Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields
| Autor: | V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, M. Yu. Melnikov, Chee-Wee Liu, S. V. Kravchenko |
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| Rok vydání: | 2018 |
| Předmět: |
Physics
Strongly Correlated Electrons (cond-mat.str-el) Physics and Astronomy (miscellaneous) Condensed matter physics FOS: Physical sciences Electron Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantum number 01 natural sciences 010305 fluids & plasmas Magnetic field Condensed Matter - Strongly Correlated Electrons 0103 physical sciences Composite fermion Fractional quantum Hall effect 010306 general physics Quantum Quantum well |
| Zdroj: | JETP Letters. 107:794-797 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364018120019 |
| Popis: | We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $\nu$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. |
| Databáze: | OpenAIRE |
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