Device application of diamonds
| Autor: | M.W. Geis |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Electron mobility
Materials science business.industry Band gap Metals and Alloys Diamond chemistry.chemical_element Nanotechnology General Chemistry Surfaces and Interfaces Electron engineering.material Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Thermal conductivity chemistry Materials Chemistry engineering Optoelectronics Breakdown voltage General Materials Science business |
| Zdroj: | Thin Solid Films. 216:134-136 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(92)90882-c |
| Popis: | Diamond is a high band gap (5.5 eV) semiconductor that has superior properties to many of the commonly used semiconductors. The high breakdown voltage (ten times that of Si), exceptionally high thermal conductivity (five times that of copper), and hole and electron mobilities near 2000 cm2 V−1 s−1 result in projections of higher operating frequencies and significantly higher output powers than those obtainable with devices made of Si or GaAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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