Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
| Autor: | Xu, Shuigang, Shen, Junying, Long, Gen, Wu, Zefei, Bao, Zhi-qiang, Liu, Cheng-Cheng, Xiao, Xiao, Han, Tianyi, Lin, Jiangxiazi, Wu, Yingying, Lu, Huanhuan, Hou, Jianqiang, An, Liheng, Wang, Yuanwei, Cai, Yuan, Ho, K. M., He, Yuheng, Lortz, Rolf, Zhang, Fan, Wang, Ning |
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| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.48550/arxiv.1701.00512 |
| Popis: | We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at {\Gamma} valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the {\Gamma} valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena. Comment: To appear in Physical Review Letters, including the Supplemental Material |
| Databáze: | OpenAIRE |
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