Novel self-epitaxy for inducing superconductivity in the topological insulator ( Bi 1 − x Sb x
| Autor: | Junya Feng, A. A. Taskin, Yoichi Ando, Gertjan Lippertz, Andrea Bliesener, Joachim Mayer, Fan Yang, Mengmeng Bai, Martina Luysberg |
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| Rok vydání: | 2020 |
| Předmět: |
Superconductivity
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Supercurrent 02 engineering and technology Fermion 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Condensed Matter::Superconductivity Topological insulator 0103 physical sciences Proximity effect (superconductivity) Superconducting transition temperature General Materials Science Thin film 010306 general physics 0210 nano-technology |
| Zdroj: | Physical Review Materials |
| ISSN: | 2475-9953 |
| DOI: | 10.1103/physrevmaterials.4.094801 |
| Popis: | Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material ${({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}$ leads to an epitaxial self-formation of $\mathrm{Pd}{\mathrm{Te}}_{2}$ superconductor having the superconducting transition temperature of $\ensuremath{\sim}1$ K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on ${({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}$. This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs. |
| Databáze: | OpenAIRE |
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