Determining Out-of-Plane Hole Mobility in CuSCN via the Time-of-Flight Technique To Elucidate Its Function in Perovskite Solar Cells
| Autor: | Julianna Panidi, Martyn A. McLachlan, Matyas Daboczi, Lokeshwari Mohan, Thomas D. Anthopoulos, Theo Kreouzis, Ji-Seon Kim, Joe Briscoe, Sinclair R. Ratnasingham |
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| Rok vydání: | 2021 |
| Předmět: |
Technology
Electron mobility Materials science time-of-flight technique Materials Science Materials Science Multidisciplinary hole transport material Time of flight technique FILMS perovskite solar cells LAYERS 09 Engineering out-of-plane hole mobility Out of plane HIGH-EFFICIENCY chemistry.chemical_compound TRANSPORT MATERIAL CHARGE-TRANSPORT General Materials Science Nanoscience & Nanotechnology copper(I) thiocyanate HYSTERESIS CONDUCTIVITY Perovskite (structure) Science & Technology Function (mathematics) PERFORMANCE Engineering physics Copper(I) thiocyanate chemistry Science & Technology - Other Topics 03 Chemical Sciences Electronic materials |
| Zdroj: | ACS Applied Materials & Interfaces. 13:38499-38507 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.1c09750 |
| Popis: | Copper(I) thiocyanate (CuSCN) is a stable, low-cost, solution-processable p-type inorganic semiconductor used in numerous optoelectronic applications. Here, for the first time, we employ the time-of-flight (ToF) technique to measure the out-of-plane hole mobility of CuSCN films, enabled by the deposition of 4 μm-thick films using aerosol-assisted chemical vapor deposition (AACVD). A hole mobility of ∼10–3 cm2/V s was measured with a weak electric field dependence of 0.005 cm/V1/2. Additionally, by measuring several 1.5 μm CuSCN films, we show that the mobility is independent of thickness. To further validate the suitability of our AACVD-prepared 1.5 μm-thick CuSCN film in device applications, we demonstrate its incorporation as a hole transport layer (HTL) in methylammonium lead iodide (MAPbI3) perovskite solar cells (PSCs). Our AACVD films result in devices with measured power conversion efficiencies of 10.4%, which compares favorably with devices prepared using spin-coated CuSCN HTLs (12.6%), despite the AACVD HTLs being an order of magnitude thicker than their spin-coated analogues. Improved reproducibility and decreased hysteresis were observed, owing to a combination of excellent film quality, high charge-carrier mobility, and favorable interface energetics. In addition to providing a fundamental insight into charge-carrier mobility in CuSCN, our work highlights the AACVD methodology as a scalable, versatile tool suitable for film deposition for use in optoelectronic devices. |
| Databáze: | OpenAIRE |
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