Formation of p–n junctions in nanoparticle cerium oxide electrolytic cells displaying memristive switching behaviour
| Autor: | Anthony Betts, Rafaela C. de Carvalho, John Cassidy |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Cerium oxide
Materials science macro-scale metal–semiconductor–metal device Electrolytic cell General Physics and Astronomy chemistry.chemical_element Nanoparticle 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences CeO2 nanoparticles fcerium dioxide 0104 chemical sciences Anode Chemistry Cerium chemistry Chemical engineering Aluminium novel synthetic method Charge carrier Physical and Theoretical Chemistry Thin film 0210 nano-technology |
| Zdroj: | Articles |
| ISSN: | 1463-9084 1463-9076 |
| Popis: | A macro-scale metal–semiconductor–metal device comprising CeO2 nanoparticles cast from a suspension of cerium dioxide formed by a novel synthetic method was fabricated. Thin CeO2 films of 40 nm thickness placed between panels of aluminium and/or copper displayed memristive-like resistive switching behaviour upon the application of potential sweeps ranging between −0.6 V and 0.6 V. A mechanism is proposed based on the notion that an electrolytic cell operates under such conditions with the initial formation of p and n-type regions within the central semiconductive thin film. Evidence is presented for the existence of numerous point defects in these nanosized CeO2 films, which are also likely to play a role in the device's operation acting as internal dopants. Steady currents were observed upon the imposition of constant potentials, most notably at higher potential values (both anodic and cathodic). It is suggested that electrons and holes act as charge carriers in these devices rather than ionic species as proposed in some other mechanisms. |
| Databáze: | OpenAIRE |
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