Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride
| Autor: | Edoardo Albisetti, Manuel Bibes, Riccardo Bertacco, Federico Fagiani, Luca Nessi, Silvia Picozzi, Stefano Cecchi, Marcio Costa, Matteo Cantoni, Jagoda Sławińska, Alessandro Novati, Christian Rinaldi, Sara Varotto, Daniela Petti, R. Calarco, Marco Buongiorno Nardelli, Paul Noël, Jean Philippe Attané, Laurent Vila, Simone Petrò |
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| Přispěvatelé: | Theory of Condensed Matter, Varotto, S, Nessi, L, Cecchi, S, Slawinska, J, Noel, P, Petro, S, Fagiani, F, Novati, A, Cantoni, M, Petti, D, Albisetti, E, Costa, M, Calarco, R, Buongiorno Nardelli, M, Bibes, M, Picozzi, S, Attane, J, Vila, L, Bertacco, R, Rinaldi, C |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
02 engineering and technology 01 natural sciences Condensed Matter::Materials Science chemistry.chemical_compound Spintronic molecular beam epitaxy Electric field 0103 physical sciences Electrical and Electronic Engineering 010306 general physics Polarization (electrochemistry) germanium telluride Instrumentation Germanium telluride ferroelectric Rashba semiconductor Spintronics business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Ferroelectricity Electronic Optical and Magnetic Materials Semiconductor Ferromagnetism chemistry Spin Hall effect Optoelectronics 0210 nano-technology business |
| Zdroj: | Nature Electronics, 4(10), 740-747 |
| ISSN: | 2520-1131 |
| Popis: | The development of spintronic devices has been limited by the poor compatibility between semiconductors and ferromagnetic sources of spin. The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. We show that ferroelectric switching by electrical gating is possible in germanium telluride, despite its high carrier density. We also show that spin-to-charge conversion has a similar magnitude to what is observed with platinum, but the charge current sign is controlled by the orientation of ferroelectric polarization. Comparison between theoretical and experimental data suggests that the inverse spin Hall effect plays a major role in switchable conversion. The ferroelectric polarization of epitaxial thin films of germanium telluride can be switched by electrical gating and used to control spin-to-charge conversion. |
| Databáze: | OpenAIRE |
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