Optical Properties of Porous Silicon p-Si (100)
| Autor: | M.V. Vuichyk, P.O. Lischuk, P.O. Gentsar, M.V. Isaev |
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| Rok vydání: | 2019 |
| Předmět: |
Range (particle radiation)
пористий кремній p-si (100) Materials science Silicon квантоворозмірний ефект Band gap Analytical chemistry chemistry.chemical_element спектри пропускання Condensed Matter Physics Porous silicon спектри відбивання lcsh:QC1-999 Spectral line chemistry General Materials Science Physical and Theoretical Chemistry Porosity Layer (electronics) Single crystal lcsh:Physics |
| Zdroj: | Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 264-268 (2019) |
| ISSN: | 2309-8589 1729-4428 |
| Popis: | In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45 %, 55 % and 65 %. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60 %. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects. |
| Databáze: | OpenAIRE |
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