Highly efficient electroluminescence in sapphire and magnesia
| Autor: | J.E. Muñoz-Santiuste, Rafael Ramírez-Jiménez, A. de Andrés, M. Tardío |
|---|---|
| Přispěvatelé: | Comunidad de Madrid, Ministerio de Economía y Competitividad (España) |
| Rok vydání: | 2014 |
| Předmět: |
MgO:Li and Al2O3:Mg [Oxide crystals]
Materials science Light emitting diodes (LEDs) Band gap Biophysics Analytical chemistry Electroluminescence F-type centers Biochemistry law.invention Crystal Impurity law business.industry Doping Wide-bandgap semiconductor General Chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Oxide crystals: MgO:Li and Al2O3:Mg Sapphire Optoelectronics business Light-emitting diode |
| Zdroj: | Digital.CSIC. Repositorio Institucional del CSIC instname |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2014.03.049 |
| Popis: | Electroluminescence (EL) has been obtained and studied in two different wide band gap oxide crystals: MgO:Li (7.8 eV) and Al2O3:Mg (8.8 eV). EL requires crystal doping with Li or Mg to induce p-type conductivity and the formation of F-type centers which are the deep levels within the band gap for electron–hole recombination. Oxidizing treatments are required in Al2O3:Mg to reach adequate conductivities. The main EL emissions are at 2.35 eV (528 nm) for MgO:Li crystals and at 3.8 eV (327 nm) for Al2O3:Mg. Trace impurities also produce EL in the visible region, their control may be used for color designed LEDs. We acknowledge financial support from Spanish MINECO, MAT2012-37276-C03-01, and Comunidad Autónoma de Madrid PHAMAS2009/MAT-1756. |
| Databáze: | OpenAIRE |
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