Femto-molar sensitive field effect transistor biosensors based on silicon nanowires and antibodies
| Autor: | Sandro Carrara, Francesca Puppo, T. S. Y. Moh, Marie-Agnès Doucey, G. De Micheli, Gregory Pandraud, Pasqualina M. Sarro |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
chemistry.chemical_classification
Materials science Silicon Biomolecule Femto Nanowire chemistry.chemical_element Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry CMOS Nanosensor Field-effect transistor 0210 nano-technology Biosensor |
| Zdroj: | 2013 IEEE SENSORS. |
| DOI: | 10.1109/ICSENS.2013.6688205 |
| Popis: | This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions. |
| Databáze: | OpenAIRE |
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