Tip-induced oxidation of silicene nano-ribbons
Autor: | Mohamed Rachid Tchalala, Hamid Oughaddou, Azzedine Bendounan, Andrew J. Mayne, Hanna Enriquez, Abdelkader Kara, Mustapha Ait Ali, Gérald Dujardin |
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Přispěvatelé: | Institut des Sciences Moléculaires d'Orsay (ISMO), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), University of Central Florida [Orlando] (UCF), Université Cadi Ayyad [Marrakech] (UCA), CY Cergy Paris Université (CY) |
Rok vydání: | 2020 |
Předmět: |
[PHYS]Physics [physics]
Materials science Photoemission spectroscopy Silicene General Engineering Bioengineering 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics law.invention law Tunnel junction Chemical physics Electric field 0103 physical sciences Nano High doses General Materials Science Reactivity (chemistry) Scanning tunneling microscope [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010306 general physics 0210 nano-technology |
Zdroj: | Nanoscale Advances Nanoscale Advances, RSC, 2020, 2 (6), pp.2309-2314. ⟨10.1039/d0na00332h⟩ |
ISSN: | 2516-0230 |
DOI: | 10.1039/d0na00332h⟩ |
Popis: | International audience; Tip-induced oxidation of silicene nano-ribbonsMohamed Rachid Tchalala,*aHanna Enriquez,aAzzedine Bendounan,bAndrew J. Mayne,aG ́erald Dujardin,aAbdelkader Kara,cMustapha Ait Alidand Hamid Oughaddou*aeWe report on the oxidation of self-assembled silicene nanoribbonsgrown on the Ag (110) surface using scanning tunneling microscopyand high-resolution photoemission spectroscopy. The results showthat silicene nanoribbons present a strong resistance towards oxida-tion using molecular oxygen. This can be overcome by increasing theelectricfield in the STM tunnel junction above a threshold of +2.6 V toinduce oxygen dissociation and reaction. The higher reactivity of thesilicene nanoribbons towards atomic oxygen is observed as expected.The HR-PES confirm these observations: even at high exposures ofmolecular oxygen, the Si 2p core-level peaks corresponding to pristinesilicene remain dominant, reflecting a very low reactivity to molecularoxygen. Complete oxidation is obtained following exposure to highdoses of atomic oxygen; the Si 2p core level peak corresponding topristine silicene disappears. |
Databáze: | OpenAIRE |
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