Thin film characterization by total reflection x-ray fluorescence
| Autor: | Adrien Danel, Tifenn Decorps, Maria-Luisa Calvo-Muñoz, Charles Geoffroy, Marc Veillerot, Motoyuki Yamagami, Emmanuel Nolot, Sandrine Lhostis, Jean-Michel Hartmann, Segolene Olivier, Hiroshi Kohno |
|---|---|
| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Freescale Semiconductor, Freescale semiconductor, Rigaku Corporation, Elexience |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Composition analysis X-ray fluorescence Substrate (electronics) 01 natural sciences Analytical Chemistry Optics 0103 physical sciences Wafer Thin film Instrumentation Saturation (magnetic) Spectroscopy 010302 applied physics Total internal reflection Silicon wafer business.industry 010401 analytical chemistry [CHIM.MATE]Chemical Sciences/Material chemistry Dead time Atomic and Molecular Physics and Optics 0104 chemical sciences Metrology TXRF business |
| Zdroj: | Spectrochimica Acta Part B: Atomic Spectroscopy Spectrochimica Acta Part B: Atomic Spectroscopy, 2008, 63 (12), pp. 1365-1369. ⟨10.1016/j.sab.2008.10.024⟩ Spectrochimica Acta Part B: Atomic Spectroscopy, Elsevier, 2008, 63 (12), pp. 1365-1369. ⟨10.1016/j.sab.2008.10.024⟩ |
| ISSN: | 0584-8547 1873-3565 |
| Popis: | International audience; Sensitive and accurate characterization of films thinner than a few nm used in nanoelectronics represents a challenge for many conventional production metrology tools. With capabilities in the 1010 at/cm2, methods usually dedicated to contamination analysis appear promising, especially Total-reflection X-Ray Fluorescence (TXRF). This study shows that under usual configuration for contamination analysis, with incident angle smaller than the critical angle of the substrate, TXRF signal saturation occurs very rapidly for dense films (below 0.5 nm for HfO2 films on Si wafers using a 9.67 keV excitation at 0.5°). Increasing the incident angle, the range of linear results can be extended, but on the other hand, the TXRF sensitivity is degraded because of a strong increase of the measurement dead time. On HfO2 films grown on Si wafers, an incident angle of 0.32° corresponding to a dead time of 95% was used to achieve linear analysis up to 2 nm. Composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Although quantitative analyses might require specific calibration, this work shows on Co–based films that the ratio between minor elements (W, P, Mo) and Co taking into account their relative sensitivity factors is a good direct reading of the composition |
| Databáze: | OpenAIRE |
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