33 W continuous output power semiconductor disk laser emitting at 1275 nm
| Autor: | Eli Kapon, Vladimir Iakovlev, Alexei Sirbu, Mircea Guina, Tomi Leinonen |
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| Přispěvatelé: | Tampere University, Photonics, Research group: Semiconductor Technology and Applications |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry 02 engineering and technology Output coupler Laser 114 Physical sciences Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention 020210 optoelectronics & photonics Optics Semiconductor law Fiber laser 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Laser power scaling Disk laser business |
| Popis: | We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. The laser exhibited an output power of 33 W for a pump spot with a diameter of 0.86 mm, an output coupler of 2.5%, and a heat-sink temperature of -5°C. When the temperature of the heat-sink was increased to 15°C, the maximum output power reached a value of ∼24 W. The study reveals that the wafer fused gain mirrors have a high optical quality and good uniformity enabling scaling of the maximum emitted power with the diameter of the pump spot, i.e. at least up to the 1 mm diameter. publishedVersion |
| Databáze: | OpenAIRE |
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