Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling

Autor: Nicolas Degrenne, Zoubir Khatir, Stefan Mollov, Damien Ingrosso, Ali Ibrahim, Nausicaa Dornic
Přispěvatelé: Technologies pour une Electro-Mobilité Avancée (SATIE-TEMA), Composants et Systèmes pour l'Energie Electrique (CSEE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY)-École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY)-Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY)-École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY), Mitsubishi Electric Centre Europ, parent, École normale supérieure - Rennes (ENS Rennes)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Ecole Normale Supérieure Paris-Saclay (ENS Paris Saclay)-Université Gustave Eiffel-CY Cergy Paris Université (CY), Mitsubishi Electric [France]
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Wire bonding
Materials science
chemistry.chemical_element
02 engineering and technology
01 natural sciences
IGBT
Aluminium
0103 physical sciences
0202 electrical engineering
electronic engineering
information engineering
BONDWIRE DEGRADATION
Power semiconductor device
Electrical and Electronic Engineering
Composite material
Safety
Risk
Reliability and Quality
ComputingMilieux_MISCELLANEOUS
010302 applied physics
POWER ELECTRONICS
020208 electrical & electronic engineering
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Insulated-gate bipolar transistor
Condensed Matter Physics
Microstructure
Atomic and Molecular Physics
and Optics
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
VIEILLISSEMENT
[SPI.TRON]Engineering Sciences [physics]/Electronics
chemistry
Power module
Power cycling
Electron backscatter diffraction
Zdroj: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2020, 114, 7p. ⟨10.1016/j.microrel.2020.113873⟩
Microelectronics Reliability, Elsevier, 2020, 114, pp.113873. ⟨10.1016/j.microrel.2020.113873⟩
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2020.113873⟩
Popis: ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ATHENES, GRECE, -; This paper focuses on the degradation at the wire bond contact with the metalized pad, and precisely its evolution with the power module aging. In order to induce damage in this particular zone, an accelerated power cycling test is carried out on well-suited devices. The on-state voltage (VCE) is measured during the test as an indicator of the degradation in the wire and metallization. Then, analyses of the interface wire-metallization are done with a numerical microscope and the EBSD (Electron Back-Scattered Diffraction) technique. As a result, an attempt to correlate the evolution of the degradation with the changes in the granular microstructure of the aluminium constituting the wire and metallization is proposed.
Databáze: OpenAIRE
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