Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films
| Autor: | Jeong-Suong Yang, Jung Won Lee, Seung-Mo Lim, Inyoung Kang, YunSung Kang, Seung-Joo Shin, Kang Heon Hur |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Phase boundary Materials science Acoustics and Ultrasonics Piezoelectric sensor 02 engineering and technology 021001 nanoscience & nanotechnology Lead zirconate titanate 01 natural sciences chemistry.chemical_compound chemistry Sputtering 0103 physical sciences Electrode Electronic engineering Wafer Electrical and Electronic Engineering Composite material Thin film 0210 nano-technology Instrumentation Perovskite (structure) |
| Zdroj: | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 64:617-622 |
| ISSN: | 0885-3010 |
| DOI: | 10.1109/tuffc.2017.2647971 |
| Popis: | The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- $\mu \text{m}$ -thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|