Single-ion addressing via trap potential modulation in global optical fields
| Autor: | Kenton R. Brown, J. True Merrill, Harley Hayden, Adam M. Meier, Curtis Volin, Brian C. Sawyer, Christopher M. Seck |
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| Rok vydání: | 2020 |
| Předmět: |
Electromagnetic field
Physics Quantum Physics Field (physics) Atomic Physics (physics.atom-ph) Phase (waves) FOS: Physical sciences General Physics and Astronomy Laser 01 natural sciences Physics - Atomic Physics 010305 fluids & plasmas law.invention Computational physics Ion Computer Science::Emerging Technologies law Modulation Qubit 0103 physical sciences Quantum Physics (quant-ph) 010306 general physics Quantum computer |
| Zdroj: | New Journal of Physics. 22:053024 |
| ISSN: | 1367-2630 |
| Popis: | To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of $^{40}$Ca$^+$ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam. 27 pages, 3 figures |
| Databáze: | OpenAIRE |
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