Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices
| Autor: | Fausto Fantini, L. Lazzarini, C. Zanotti Fregonara, Mattia Borgarino, Giancarlo Salviati |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
InGaAs
Materials science Cathodoluminescence Dislocations Heterojunction bipolar transistors Butt-coupled laser-waveguide devices Semiconductor optical amplifiers Erbium-doped fibre optical amplifiers Be out-diffusion InGaAsP InP AlGaAs GaAs General Physics and Astronomy chemistry.chemical_element law.invention Structural Biology law Microelectronics General Materials Science Optical amplifier business.industry Bipolar junction transistor Heterojunction Cell Biology Cladding (fiber optics) Laser chemistry Optoelectronics Beryllium business |
| Zdroj: | Micron. 31:269-275 |
| ISSN: | 0968-4328 |
| DOI: | 10.1016/s0968-4328(99)00093-1 |
| Popis: | This study reports on the microcharacterization of devices for optoelectronic and for microelectronic applications using low temperature ( T=5 and 77 K) spectrally resolved cathodoluminescence (SCL). The mechanisms leading to compositional inhomogeneities in the regrowth regions of InP-based butt-coupled laser-waveguide devices for semiconducting optical amplifiers (SOAs) and for defect generation in the active and cladding layers of GaAs based pump lasers for erbium-doped optical fibre amplifiers (EDFAs) were studied. Beryllium out-diffusion in the base regions of GaAs-based heterojunction bipolar transistors (HBTs) after bias ageing was also studied. By comparing the CL results with TEM, SIMS and HRXRD studies and with the existing literature, the observed growth and operation induced defects were attributed, respectively, to the following mechanisms: recombination-enhanced defect glide (REDG) in the pump lasers, recombination enhanced impurity diffusion (REID) in the HBTs and electrostatically induced growth flux instabilities in the butt-coupled laser-waveguide devices. |
| Databáze: | OpenAIRE |
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