Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector
| Autor: | Clara Bataillon, Sylvie Bernhardt, Rodolphe Alchaar, A. Ramiandrasoa, Vignesh Arounassalame, Maxime Bouschet, Philippe Christol, I. Ribet-Mohamed, Jean-Philippe Perez |
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| Přispěvatelé: | DOTA, ONERA, Université Paris Saclay [Palaiseau], ONERA-Université Paris-Saclay, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), LYNRED (Veurey-Voroize) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Materials science business.industry Superlattice Photodetector Substrate (electronics) [SPI.TRON]Engineering Sciences [physics]/Electronics Optoelectronics Quantum efficiency Infrared detector [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS Dark current Molecular beam epitaxy |
| Zdroj: | Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.4, ⟨10.1117/12.2598159⟩ |
| DOI: | 10.1117/12.2598159⟩ |
| Popis: | In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, was grown by molecular beam epitaxy (MBE) on GaSb substrate. At 150K, dark current measurements shows a device in the Shockley-Read-Hall (SRH) regime but with an absolute value comparable to the state-of-the-art. A quantum efficiency of 50% at the wavelength of 3 μm for a 3 μm thick absorption layer is found in simple pass configuration and front-side illumination. Combined with lifetime measurements performed on dedicated samples through time resolved photoluminescence (TRPL) technique, mobility is extracted from these measurements by using a theoretical calculation of the quantum efficiency thanks to Hovel’s equations. Such an approach helps us to better understand the hole minority carrier transport in Ga-free T2SL MWIR XBn detector and therefore to improve its performance. |
| Databáze: | OpenAIRE |
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