Molecular Beam Sampling to Analyze the Reaction Mechanism of Chemical Vapor Deposition

Autor:	Kazunori Watanabe, Kobayashi Junichi, Yoko Ichikawa, Masato Ikegawa, Tatehiko Usui, Yoshitsugu Tsutsumi
Rok vydání:	1997
Předmět:	Reaction mechanism Chemistry Radical Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Thermal Mass spectrum Wafer Electrical and Electronic Engineering Thin film Quadrupole mass analyzer Molecular beam
Zdroj:	SHINKU. 40:353-359
ISSN:	1880-9413 0559-8516
DOI:	10.3131/jvsj.40.353
Popis:	In order to understand the chemical vapor deposition (CVD) reaction mechanism, forming a thin film from the gas phase, it is important to identify the intermediate chemical active species (radicals) for each reaction. Radicals generally have very short lifetimes; therefore, it is very difficult to detect them. Molecular beam sampling (MBS) is a method that can extract radicals in the gas phase using free jet expansion. A vacuum system using a MBS method was designed to analyze the CVD reaction mechanism in the gas phase near the surface of the wafer. The system consists of a thermal flow‐through type CVD reactor and three differential pumping vacuum chambers with a quadrupole mass analyzer. The performance of the MBS system was tested with various gases. The system was applied to detect radicals produced in the region near the wafer in a thermal TEOS/O3 (tetraethylorthosilicate) CVD reaction to deposit SiO2 thin films. It is proved that the radicals, from which ethoxy bases of TEOS are extracted, are form...
Databáze:	OpenAIRE
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