Band Gap Energy in Silicon
| Autor: | Jeremy J. Low, Andrew Jones, Tariq H. Gilani, Drew P. Pulsifer, Michael L. Kreider |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Condensed matter physics Physics::Instrumentation and Detectors business.industry Band gap chemistry.chemical_element General Medicine Atmospheric temperature range Linear relationship chemistry Optoelectronics Constant current Direct and indirect band gaps business Value (mathematics) Voltage |
| Zdroj: | Volume 7, Issue 1. 7 |
| ISSN: | 2375-8732 1536-4585 |
| DOI: | 10.33697/ajur.2008.010 |
| Popis: | The band gap energy, Eg in silicon was found by exploiting the linear relationship between the temperature and voltage for the constant current in the temperature range of 275 K to 333 K. Within the precision of our experiment, the results obtained are in good agreement with the known value energy gap in silicon. The temperature dependence of Eg for silicon has also been studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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