Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
| Autor: | Guinther Kellermann, R. Neuenschwander, J. García Molleja, J. Bürgi, Jorge Feugeas, Aldo F. Craievich |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Materials science Ciencias Físicas III-V SEMICONDUCTORS Substrate (electronics) SYNCHROTRONS purl.org/becyt/ford/1 [https] Optics Sputtering WIDE BAND GAP SEMICONDUCTORS Thin film Instrumentation Diffractometer ALUMINIUM COMPOUNDS Física de los Fluidos y Plasma X-RAY DIFFRACTION business.industry SPUTTER DEPOSITION SEMICONDUCTOR THIN FILM GAS MIXTURES purl.org/becyt/ford/1.3 [https] Sputter deposition SEMICONDUCTOR GROWTH Amorphous solid X-RAY REFLECTION INSTRUMENTAÇÃO (FÍSICA) Cavity magnetron X-RAY SCATTERING Optoelectronics X-RAY DIFFRACTOMETERS business CIENCIAS NATURALES Y EXACTAS |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP CONICET Digital (CONICET) Consejo Nacional de Investigaciones Científicas y Técnicas instacron:CONICET |
| Popis: | The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer. © 2013 American Institute of Physics Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); Argentina Fil: Newenschwander, R.. Laboratorio Nacional de Luz Sincrotron Campinas; Fil: Kellermann, G.. Universidade Federal Do Parana; Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); Argentina Fil: Craievich, A.. Instituto de Fisica Universidad de San Pablo; Fil: Feugeas J.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); Argentina |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|