Photocontrollable Resistivity Change in Nanoparticle-Doped Liquid Crystal Alignment Layer: Voltage Holding and Discharging Properties of Fringe-Field Switching Liquid Crystal Modes
| Autor: | Jaewon Lee, Hak-Rin Kim, Jun-Chan Choi, Jeong-Hoon Ko, Dong-Jin Lee |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
General Chemical Engineering discharging property liquid crystal alignment polyimide layer Nanoparticle 02 engineering and technology Dielectric 01 natural sciences law.invention 010309 optics Inorganic Chemistry voltage holding property law Electrical resistivity and conductivity Liquid crystal 0103 physical sciences lcsh:QD901-999 General Materials Science photocontrolled resistivity fringe-field switching liquid crystal mode business.industry Doping 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Optoelectronics lcsh:Crystallography 0210 nano-technology business Polyimide Voltage |
| Zdroj: | Crystals, Vol 11, Iss 268, p 268 (2021) Crystals Volume 11 Issue 3 |
| ISSN: | 2073-4352 |
| Popis: | In liquid crystal (LC) displays, deriving an optimum resistance level of an LC alignment polyimide (PI) layer is important because of the trade-off between the voltage holding and surface-discharging properties. In particular, to apply a power-saving low-frequency operation scheme to fringe-field switching (FFS) LC modes with negative dielectric LC (n-LC), delicate material engineering is required to avoid surface-charge-dependent image flickering and sticking problems, which severely degrade with lowering operation frequency. Therefore, this paper proposes a photocontrolled variable-resistivity PI layer in order to systematically investigate the voltage holding and discharging properties of the FFS n-LC modes, according to the PI resistivity (ρ) levels. By doping fullerene into the high-ρ PI as the photoexcited charge-generating nanoparticles, the ρ levels of the PI were continuously controllable with a wide tunable range (0.95 × 1015 Ω∙cm to 5.36 × 1013 Ω∙cm) through Ar laser irradiation under the same LC and LC alignment conditions. The frequency-dependent voltage holding and discharge behaviors were analyzed with photocontrolled ρ variation. Thus, the proposed experimental scheme is a feasible approach in PI engineering for a power-saving low-frequency FFS n-LC mode without the image flickering and image sticking issues. |
| Databáze: | OpenAIRE |
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