Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit
| Autor: | Y. F. Lao, A. G. U. Perera |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Physics
Infrared business.industry lcsh:Electronics lcsh:TK7800-8360 Photodetector Heterojunction 02 engineering and technology Photodetection 021001 nanoscience & nanotechnology 01 natural sciences Band offset Electronic Optical and Magnetic Materials Low energy 0103 physical sciences Limit (music) lcsh:QC350-467 Optoelectronics Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Electronic band structure business lcsh:Optics. Light |
| Zdroj: | Advances in OptoElectronics, Vol 2016 (2016) |
| ISSN: | 1687-5648 1687-563X |
| Popis: | Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters of a material and the interface between two materials. IP also involves the generation and collection of photocarriers, which leads to applications in the photodetectors. This review discusses the generic IP processes based on heterojunction structures, characterizing p-type band structure and the band offset at the heterointerface, and infrared photodetection including a novel concept of photoresponse extension based on an energy transfer mechanism between hot and cold carriers. |
| Databáze: | OpenAIRE |
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