Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction
| Autor: | Mohamed Fethi Boujmil, M. Bouaïcha, Hanane Saidi, C. Ben Alaya, Brieux Durand, Jean-Louis Lazzari |
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| Přispěvatelé: | CTr Sfax, Institut national des technologies et sciences de la mer, Centre de génétique et de physiologie moléculaire et cellulaire (CGPhiMC), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherches et des Technologies de l’Energie (CRTEn), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Band gap General Physics and Astronomy 02 engineering and technology Substrate (electronics) 7. Clean energy 01 natural sciences [SPI.MAT]Engineering Sciences [physics]/Materials Crystallinity Tetragonal crystal system [SPI]Engineering Sciences [physics] 0103 physical sciences General Materials Science Crystalline silicon Thin film ComputingMilieux_MISCELLANEOUS 010302 applied physics Chalcopyrite business.industry 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Current Applied Physics Current Applied Physics, Elsevier, 2020, 20 (1), pp.29-36. ⟨10.1016/j.cap.2019.09.015⟩ Current Applied Physics, Elsevier, 2019, 20 (1), pp.29-36. ⟨10.1016/j.cap.2019.09.015⟩ Current Applied Physics, 2020, 20 (1), pp.29-36. ⟨10.1016/j.cap.2019.09.015⟩ Current Applied Physics, 2019, 20 (1), pp.29-36. ⟨10.1016/j.cap.2019.09.015⟩ |
| ISSN: | 1567-1739 |
| Popis: | International audience; P-type CIGS (CuIn 1-x Ga x Se 2) thin films are electro-deposited on a p-type c-Si substrate with a galvanostatic mode to form CIGS(p)/c-Si(p) hetero-junction. The Ga content is varied up to x = 30%. The physical properties of formed CIGS films are characterized by XRD, SEM, EDS and UV-Visible spectroscopy. With x = 30%, we obtain a single chalcopyrite phase of CIGS with a tetragonal crystal structure, a high crystallinity, an orientation toward the (112) direction and a band gap energy of 1.40 eV. AM1.5 J-V performed on the CuI 0.7 G 0.3 Se 2 /c-Si hetero-junction reveals interesting photovoltaic parameters with an efficiency of 3.75%. In addition, using the energy diagram of the hetero-junction calculated with the Anderson model, we show that it could play a dual role when combined to a c-Si cell in a Ag-Al/c-Si(n +)/c-Si (p)/CIGS(p)/Al new architecture. Therefore, in addition to its interesting photovoltaic parameters, this heterojunction can substitute the BSF. |
| Databáze: | OpenAIRE |
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