A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication
| Autor: | Khaled Khalaf, Yang Zhang, Piet Wambacq, Xinyan Tang, Wei-Min Wu, Bjorn Debaillie, Shih-Hung Chen, Yao Liu, Giovanni Mangraviti |
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| Přispěvatelé: | Electronics and Informatics, Faculty of Engineering |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Physics
Voltage swing business.industry 020208 electrical & electronic engineering Bandwidth (signal processing) dBm Electrical engineering Linearity Silicon on insulator 020206 networking & telecommunications 02 engineering and technology Front and back ends Robustness (computer science) 0202 electrical engineering electronic engineering information engineering business 5G |
| Popis: | A 28 GHz front-end module (FEM) for 5G communication is implemented in 22 nm FD-SOI technology. Competitive performance for both TX and RX modes is achieved simultaneously with robustness in TX mode and ESD protection. The key for these features is the transmit/receive (T/R) switch incorporating PA circuitry, offering high linearity and robustness in TX mode, low NF in RX mode, and ESD-protection capability. The PA output stage uses a 3-stacked-FET topology to achieve high output power. Several matching techniques are implemented to equally distribute the large output voltage swing among the three stacked FETs. P sat and PAE max in TX mode are 17.2 dBm and 21.5%, respectively. NF and IIP 3 in RX mode are 3.2 dB and -5.4 dBm, respectively. With a 100 MHz bandwidth 256-QAM single-carrier signal the FEM achieves an EVM of -30 dB with average output power of 10.1 dBm and average PAE of 8.3 %. The reliability of the FEM in TX mode is assessed, demonstrating the robustness of the FEM. The ESD measurement of the FEM shows 2 kV human-body-model (HBM) ESD protection. |
| Databáze: | OpenAIRE |
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