Hydrogen 'doped' thin film diamond field effect transistors for high power applications
| Autor: | Richard B. Jackman, John S. Foord, Lisa Y.S. Pang, Hui Jin Looi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Doping Schottky diode Diamond Chemical vapor deposition engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials Materials Chemistry engineering Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering Thin film business Leakage (electronics) Diode |
| Zdroj: | SOLID-STATE ELECTRONICS. 42(12) |
| ISSN: | 0038-1101 |
| Popis: | Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen; mobility values as high as 70 cm2 V-1 s-1 have been measured for films with a carrier concentration of 5 x 1017 cm-3. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < 1 nA, no indication of reverse bias breakdown at 100 V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of switching FDS values of 100 V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W mm-1, implying that thin film diamond may after all be an interesting material for power applications. © 1998 Published by Elsevier Science Ltd. All rights reserved. |
| Databáze: | OpenAIRE |
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