Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures
| Autor: | Gunjan Patwari, P. K. Kalita, Ranjit Singha |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Nanostructure Band gap doping 02 engineering and technology Conductivity 01 natural sciences Nanomaterials band gap 0103 physical sciences General Materials Science Materials of engineering and construction. Mechanics of materials defects 010302 applied physics business.industry Mechanical Engineering Doping d-value Cu doped 021001 nanoscience & nanotechnology Condensed Matter Physics burstein-moss effect Mechanics of Materials TA401-492 Optoelectronics conductivity 0210 nano-technology business Burstein–Moss effect |
| Zdroj: | Materials Science-Poland, Vol 34, Iss 1, Pp 69-78 (2016) |
| ISSN: | 2083-134X |
| DOI: | 10.1515/msp-2016-0030 |
| Popis: | Al and Cu doped ZnO nanoparticles are considered as appropriate for modulation of structural and optoelectronic properties. Al atoms are found to substitute the host Zn whereas Cu dopants mainly segregate in grain boundaries and thereby determine the optical properties. The undoped as well as Al and Cu doped ZnO exhibit spherical well defined particles. The spherical nanoparticles change to rod type structures on co-doping. The average particle size decreases on doping what consequently results in an increment in band gap. Blue shift in UV absorption is governed by the functional group of glucose; further blue shift occurring on metal doping may be attributed to Burstein-Moss effect. PL spectra of doped and undoped ZnO show a dominant near band gap UV emission along with visible emission owing to the defects. The PL peak intensity increases on doping with Cu and Al. The linear I-V characteristics indicate the ohmic behavior of ZnO nanostructures. |
| Databáze: | OpenAIRE |
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