| Autor: |
Liem T. Tran, M.M. Hoppe, T.R. Block, F.M. Yamada, Donald K. Umemoto, D.C. Streit, E.A. Rezek, A.K. Oki, D.T. Okazaki |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers. |
| Popis: |
High-reliability performance of an X-band high-intercept MMIC amplifier fabricated using a production GaAs/AlGaAs HBT process technology is reported. Operating at 20 kA/cm/sup 2/ quiescent collector current density, the single-stage balanced amplifier with on-chip regulation has a projected median-time-to-failure (MTF) of 4/spl times/10/sup 7/ hours at a 125/spl deg/C junction temperature. MTF was determined by three-temperature constant-stress accelerated lifetest using |/spl Delta/S21|>1.0 dB as the failure criterion. Additionally, an activation energy (Ea) of 1.2 eV and log-standard deviation (/spl sigma/) of 0.7 was measured. This is the first report of HBT reliability based on small-signal microwave characteristics of HBT MMIC amplifiers under lifetest. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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