Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
| Autor: | Eric Feltin, Isodiana Crupi, Mauro Mosca, Fulvio Caruso, Giuseppe Lullo, Roberto Macaluso, D. Scire |
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| Přispěvatelé: | Macaluso, Roberto, Lullo, Giuseppe, Crupi, Isodiana, Sciré, Daniele, Caruso, Fulvio, Feltin, Eric, Mosca, Mauro |
| Předmět: |
Materials science
Computer Networks and Communications Band gap growth lcsh:TK7800-8360 02 engineering and technology fabrication Electroluminescence 01 natural sciences Settore ING-INF/01 - Elettronica gan law.invention electroluminescence law leds 0103 physical sciences morphology zno/gan heterojunction leds Spontaneous emission Electrical and Electronic Engineering epitaxial p-gan layers 010302 applied physics ZnO nanorod business.industry zno nanorods zno/gan heterostructure lcsh:Electronics epitaxial p-GaN layer Heterojunction dependence 021001 nanoscience & nanotechnology optical-properties chemical bath deposition Semiconductor Hardware and Architecture Control and Systems Engineering ZnO/GaN heterojunction LED Signal Processing zno Optoelectronics Nanorod 0210 nano-technology business nanorods Chemical bath deposition Light-emitting diode |
| Zdroj: | Electronics Volume 9 Issue 6 Electronics, Vol 9, Iss 991, p 991 (2020) |
| Popis: | Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash organic vapor-phase epitaxy -grown epitaxial layer of p-doped GaN. Circular 200 µ m-sized violet-emitting LEDs with a p-n contact distance as low as 3 µ m exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side. |
| Databáze: | OpenAIRE |
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