Silicon single-photon avalanche diodes with nano-structured light trapping
| Autor: | Theodore I. Kamins, Zhenyang Xia, Ming Zhou, Zongfu Yu, Xiao Jiang, Kai Zang, Qiang Zhang, Matthew Morea, Jian Ma, Ching-Ying Lu, Yijie Huo, Xun Ding, James S. Harris, Xiaochi Chen |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors Science ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION General Physics and Astronomy chemistry.chemical_element Physics::Optics 02 engineering and technology 01 natural sciences 7. Clean energy General Biochemistry Genetics and Molecular Biology Article 010309 optics Silicon photomultiplier Optics 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Image sensor lcsh:Science Diode Jitter Multidisciplinary Avalanche diode business.industry General Chemistry 021001 nanoscience & nanotechnology chemistry Single-photon avalanche diode CMOS Optoelectronics lcsh:Q 0210 nano-technology business |
| Zdroj: | Nature Communications Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017) |
| ISSN: | 2041-1723 |
| Popis: | Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range. The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off. |
| Databáze: | OpenAIRE |
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