Modeling Energy Bands in Type II Superlattices
| Autor: | Zoubir Becer, N. Sengouga, Abdeldjalil Bennecer |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
General Chemical Engineering
Superlattice Basis function 02 engineering and technology 01 natural sciences Inorganic Chemistry symbols.namesake Condensed Matter::Materials Science Effective mass (solid-state physics) 0103 physical sciences Bound state General Materials Science Electronic band structure 010302 applied physics Physics FEM business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Finite element method Computational physics multi-band k· p Semiconductor symbols Bir–Pikus Hamiltonian 0210 nano-technology business Hamiltonian (quantum mechanics) Type-II InAs/GaSb superlattices |
| Zdroj: | Crystals Volume 9 Issue 12 |
| ISSN: | 2073-4352 |
| Popis: | We present a rigorous model for the overall band structure calculation using the perturbative k · p approach for arbitrary layered cubic zincblende semiconductor nanostructures. This approach, first pioneered by Kohn and Luttinger, is faster than atomistic ab initio approaches and provides sufficiently accurate information for optoelectronic processes near high symmetry points in semiconductor crystals. k · p Hamiltonians are discretized and diagonalized using a finite element method (FEM) with smoothed mesh near interface edges and different high order Lagrange/Hermite basis functions, hence enabling accurate determination of bound states and related quantities with a small number of elements. Such properties make the model more efficient than other numerical models that are usually used. Moreover, an energy-dependent effective mass non-parabolic model suitable for large gap materials is also included, which offers fast and reasonably accurate results without the need to solve the full multi-band Hamiltonian. Finally, the tools are validated on three semiconductor nanostructures: (1) the bound energies of a finite quantum well using the energy-dependent effective mass non-parabolic model (2) the InAs bulk band structure and (3) the electronic band structure for the absorber region of photodetectors based on a type-II InAs/GaSb superlattice at room temperature. The tools are shown to work on simple and sophisticated designs and the results show very good agreement with recently published experimental works. |
| Databáze: | OpenAIRE |
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