Silicon Nitride (Si3N4) (Noncrystalline)

Autor: H.R. Philipp
Rok vydání: 1997
Předmět:
DOI: 10.1016/b978-012544415-6.50040-6
Popis: Publisher Summary Noncrystalline silicon nitride (Si3N4) is an important material in the integrated circuit technology. In this context, it is used in thin-film form and can be prepared by a variety of deposition techniques, including pyrolytic decomposition of a mixture of gases containing silicon and nitrogen, sputtering, and glow-discharge techniques. Silicon oxynitride (SiOxNy) films can also be readily formed by adding small amounts of NO or O2 to the reactive gases. The optical properties of these films are strongly dependent on the deposition temperature, Si-to-N, and Si-to-O-atom ratios. Other studies also suggest the presence of chemically bound hydrogen in the film. Thus, the stoichiometry of an arbitrary film can be more accurately indicated by SiOxNyHz, and the refractive index and other optical properties can be a function of x, y, and z. Samples prepared by high temperature pyrolysis are generally considered to have, or come close to, the ideal stoichiometry, Si3N4.
Databáze: OpenAIRE
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