Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons
| Autor: | JM José Maria Ulloa, Eduardo Martínez Castellano, Javier Yeste, Elías Muñoz, A. Gonzalo, L. Stanojević, Miguel Montes Bajo, Julen Tamayo-Arriola, Vicente Muñoz-Sanjosé, Adrian Hierro, Oleksii Volodymyrovych Klymov, Said Agouram |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
quantum well QC1-999 Infrared spectroscopy 02 engineering and technology Metal oxide nanoparticles 01 natural sciences Self assembled metal-oxide 0103 physical sciences Electrical and Electronic Engineering intersubband transition 010306 general physics Quantum well cdo localized surface plasmon business.industry Physics 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optoelectronics 0210 nano-technology business Biotechnology Localized surface plasmon |
| Zdroj: | Nanophotonics, Vol 10, Iss 9, Pp 2509-2518 (2021) |
| ISSN: | 2192-8614 2192-8606 |
| Popis: | Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies. |
| Databáze: | OpenAIRE |
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