Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology
Autor: | Jose Miguel Rocha-Perez, Alejandro Diaz-Sanchez, Rodolfo Z. Garcia-Lozano, Arturo Morales-Acevedo, Enrique J. Tinajero-Perez, Pedro Rosales-Quintero, Jesus E. Molinar-Solis |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Advances in Condensed Matter Physics, Vol 2014 (2014) |
ISSN: | 1687-8124 1687-8108 |
DOI: | 10.1155/2014/632785 |
Popis: | The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture. |
Databáze: | OpenAIRE |
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