High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
| Autor: | Jae Geun Ha, Jihoon Lee, Chang Young Choi, Jung Hyuk Koh, Sangsig Kim, Sang Mo Koo |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Electron mobility
Materials science Orders of magnitude (temperature) Field-effect transistors (FETs) Variation of the current level Nanotechnology Substrate (electronics) law.invention Materials Science(all) law lcsh:TA401-492 General Materials Science Chemistry/Food Science general Saturation (magnetic) Nano Express Material Science Nanoribbon FET business.industry Engineering General Transistor Materials Science general Atmospheric temperature range Condensed Matter Physics Physics General Molecular Medicine Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials Field-effect transistor Current (fluid) business |
| Zdroj: | Nanoscale Research Letters Nanoscale Research Letters, Vol 5, Iss 11, Pp 1795-1799 (2010) |
| ISSN: | 1556-276X 1931-7573 |
| DOI: | 10.1007/s11671-010-9714-y |
| Popis: | We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink