Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms
| Autor: | Kyounghwan Kim, Emanuel Tutuc, Chris M. Corbet, Connor J. McClellan, Sushant Sonde, Sanjay K. Banerjee |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Graphene Gate dielectric General Engineering General Physics and Astronomy chemistry.chemical_element Dielectric law.invention chemistry Gate oxide law Optoelectronics General Materials Science business Graphene nanoribbons High-κ dielectric Titanium Graphene oxide paper |
| Zdroj: | ACS Nano. 8:10480-10485 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/nn5038509 |
| Popis: | We fabricate and characterize a set of dual-gated graphene field effect transistors using a novel physical vapor deposition technique in which titanium is evaporated onto the graphene channel in 10 Å cycles and oxidized in ambient to form a top-gate dielectric. A combination of X-ray photoemission spectroscopy, ellipsometry, and transmission electron microscopy suggests that the titanium is oxidizing in situ to titanium dioxide. Electrical characterization of our devices yields a dielectric constant of κ = 6.9 with final mobilities above 5500 cm(2)/(V s). Low temperature analysis of the gate-leakage current in the devices gives a potential barrier of 0.78 eV in the conduction band and a trap depth of 45 meV below the conduction band. |
| Databáze: | OpenAIRE |
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