Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Autor: Tony Rohel, S. Loualiche, Jacky Even, Charles Cornet, A. Le Corre, W. Guo, Soline Boyer-Richard, Nicolas Bertru, Olivier Durand, Alexandre Bondi, Antoine Létoublon
Přispěvatelé: Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), The authors acknowledge Professor Maryline Guilloux-Viry of 'Sciences Chimiques de Rennes' for her kind support on the X-ray characterisation and 'Rennes Métropole' for funding. This work is supported by the Chinese Scholarship council and the 'région Bretagne' within the 'PONANT' CPER project. This work is also supported by the ANR project SINPHONIC n◦ 2011 JS03 006 01., Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne
Rok vydání: 2012
Předmět:
Zdroj: Applied Surface Science
Applied Surface Science, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
Applied Surface Science, Elsevier, 2012, 258, pp.2808. ⟨10.1016/j.apsusc.2011.10.139⟩
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.10.139
Popis: International audience; We have investigated quantitatively anti-phase domains (APD) structural properties in 20 nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive analysis methods. These analyses, including atomic force microscopy and X-ray diffraction, are applied to samples grown by various molecular beam epitaxy growth modes. Roughness, lateral crystallite size of the epilayer, ratio of antiphase domains and their relationship are discussed. It is shown that both these analysis methods are useful to clarify the physical mechanisms occurring during the heterogeneous growth. Low temperature migration enhanced epitaxy is found to guarantee smoother surface than conventional molecular beam epitaxy. Effect of annealing temperature on antiphase boundaries (APBs) thermodynamics is discussed. The modification of the thermodynamic equilibrium through a thermal activation of APBs motion is expected to play an important role in the dynamic evolution of surfaces during thermal annealing and growth.
Databáze: OpenAIRE