Carbon saturation of silicon target under the action of pulsed high-intensity ion beam
| Autor: | Gennady E. Remnev, N.E. Aktaev |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
Materials science импульсные пучки Silicon Ion beam Physics::Instrumentation and Detectors Diffusion Analytical chemistry кремниевые мишени chemistry.chemical_element 02 engineering and technology 01 natural sciences complex mixtures Ion ионные пучки кремний поверхности Adsorption 0103 physical sciences 010302 applied physics углерод technology industry and agriculture Strained silicon 021001 nanoscience & nanotechnology equipment and supplies насыщение stomatognathic diseases chemistry 0210 nano-technology Carbon Beam (structure) |
| Popis: | The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. |
| Databáze: | OpenAIRE |
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