Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
| Autor: | Subramaniam Arulkumaran, Chandra Mohan Manoj Kumar, Gang Ye, Yang Li, R. Hofstetter, Hong Wang, Geok Ing Ng, M. J. Anand, Kian Siong Ang |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Temasek Laboratories |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) business.industry Contact resistance General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element High-electron-mobility transistor Engineering::Electrical and electronic engineering::Semiconductors [DRNTU] Metal Semiconductor chemistry Electrical resistivity and conductivity visual_art visual_art.visual_art_medium business Ohmic contact |
| Popis: | Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ~5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface. |
| Databáze: | OpenAIRE |
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