High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition
| Autor: | Salvatore Iannotta, F. Chiarella, L. Aversa, Antonio Cassinese, Francesca Ciccullo, T. Toccoli, Mario Barra, Roberta Tatti, Roberto Verucchi |
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| Přispěvatelé: | Chiarella, Fabio, T., Toccoli, Barra, Mario, L., Aversa, Ciccullo, Francesca, R., Tatti, R., Verucchi, S., Iannotta, Cassinese, Antonio |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Electron mobility
Fabrication Materials science Physics and Astronomy (miscellaneous) business.industry Substrate (electronics) Atmospheric temperature range PERFORMANCE SEMICONDUCTORS TRANSPORT Organic semiconductor Thin-film transistor Optoelectronics Deposition (phase transition) GROWTH Thin film business AMBIENT |
| Zdroj: | Applied physics letters 104 (2014): 143302. doi:10.1063/1.4870991 info:cnr-pdr/source/autori:Chiarella, F.; Toccoli, T.; Barra, M.; Aversa, L.; Ciccullo, F.; Tatti, R.; Verucchi, R.; Iannotta, S.; Cassinese, A./titolo:High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition/doi:10.1063%2F1.4870991/rivista:Applied physics letters/anno:2014/pagina_da:143302/pagina_a:/intervallo_pagine:143302/volume:104 |
| Popis: | In this paper, we report on the fabrication of N,N'-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN2) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm(2)/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound. (C) 2014 AIP Publishing LLC. |
| Databáze: | OpenAIRE |
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