Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures
| Autor: | Stephen J. Pennycook, Jingsheng Chen, Tao Wang, Ke Huang, Shuying Cheng, Changjian Li, X. Renshaw Wang, Junyao Floria Wang, Mengjia Jin, Dongchen Qi, Shengyao Li, Yangyang Li, Liang Wu, Xiaozhong He |
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| Přispěvatelé: | School of Physical and Mathematical Sciences |
| Rok vydání: | 2021 |
| Předmět: |
Electron mobility
Materials science Magnetoresistance FOS: Physical sciences Giant magnetoresistance 02 engineering and technology 010402 general chemistry 01 natural sciences Superconductivity Condensed Matter - Materials Science Materials [Engineering] Dopant business.industry Mechanical Engineering Doping Giant Magnetoresistance Materials Science (cond-mat.mtrl-sci) Heterojunction 021001 nanoscience & nanotechnology 0104 chemical sciences Titanium oxide Bipolar Conduction Mechanics of Materials Optoelectronics 0210 nano-technology business |
| DOI: | 10.48550/arxiv.2104.09322 |
| Popis: | Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, for example, H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal–insulator transition. Here, an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films is reported. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy is formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ≈6 times higher than its conventional phase. This study paves a way to empower conventional materials in existing electronics and induce novel electronic phases. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version |
| Databáze: | OpenAIRE |
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